vishay siliconix SIA911EDJ document number: 68927 s09-0389-rev. b, 09-mar-09 www.vishay.com 1 dual p-channel 20-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? new thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ? typical esd protection 4000 v applications ? load switch, pa switch and battery switch for portable devices notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless pack age. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bo ttom side solder interconnection. e. rework conditions: manual soldering with a so ldering iron is not recommended for leadless components. f. maximum under steady state conditions is 110 c/w. product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 20 0.101 at v gs = - 4.5 v - 4.5 a 4.9 nc 0.141 at v gs = - 2.5 v - 4.5 a 0.192 at v gs = - 1.8 v - 2 markin g code x x x d h x lot tracea b ility and date code part # code s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak sc-70-6 dual d 1 d 2 orderin g information: SIA911EDJ-t1-ge3 (lead (p b )-free and halogen-free) p-channel mosfet s 2 d 2 600 g 2 p-channel mosfet s 1 d 1 600 g 1 absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 4.5 a a t c = 70 c - 4.5 a t a = 25 c - 3.6 b, c t a = 70 c - 2.9 b, c pulsed drain current i dm - 10 continuous source-drain diode current t c = 25 c i s - 4.5 a t a = 25 c - 1.6 b, c maximum power dissipation t c = 25 c p d 7.8 w t c = 70 c 5 t a = 25 c 1.9 b, c t a = 70 c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t 5 s r thja 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16
www.vishay.com 2 document number: 68927 s09-0389-rev. b, 09-mar-09 vishay siliconix SIA911EDJ notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient v ds /t j i d = - 250 a - 21 mv/c v gs(th) temperature coefficient v gs(th) /t j 2.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 1 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 a zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 2.7 a 0.083 0.101 v gs = - 2.5 v, i d = - 2.3 a 0.115 0.141 v gs = - 1.8 v, i d = - 1 a 0.153 0.192 forward transconductance a g fs v ds = - 10 v, i d = - 2.7 a 7s dynamic b total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 3.6 a 7.1 11 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 3.6 a 4.2 6.5 gate-source charge q gs 0.7 gate-drain charge q gd 1.2 gate resistance r g f = 1 mhz 600 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 3.5 i d ? - 2.9 a, v gen = - 4.5 v, r g = 1 92 140 ns rise time t r 200 300 turn-off delay time t d(off) 700 1100 fall time t f 400 600 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 3.5 i d ? - 2.9 a, v gen = - 8 v, r g = 1 32 50 rise time t r 70 105 turn-off delay time t d(off) 990 1500 fall time t f 410 615 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 4.5 a pulse diode forward current i sm - 10 body diode voltage v sd i s = - 2.9 a, v gs = 0 v - 0.9 - 1.2 v
document number: 68927 s09-0389-rev. b, 09-mar-09 www.vishay.com 3 vishay siliconix SIA911EDJ typical characteristics 25 c, unless otherwise noted gate current vs. gate-to-source voltage output characteristics on-resistance vs. drain current and gate voltage 0 5 10 15 20 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) i g - gate c u rrent ( a) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =5thr u 2.5 v v gs =2 v v gs = 1.5 v v gs =1 v , 0.5 v 0.00 0.07 0.14 0.21 0.2 8 0.35 0246 8 10 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =2.5 v v gs =1. 8 v v gs = 4.5 v gate current vs. gate-to-source voltage transfer characteristics gate charge 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) i g - gate c u rrent ( a) 10 -2 10 -1 1 10 1 10 2 10 3 t j = 150 c t j = 25 c 0 1 2 3 4 5 0.0 0.4 0. 8 1.2 1.6 2.0 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = - 55 c t c = 125 c t c = 25 c 0 2 4 6 8 0246 8 i d =3.6a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds =16 v v ds =10 v
www.vishay.com 4 document number: 68927 s09-0389-rev. b, 09-mar-09 vishay siliconix SIA911EDJ typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage threshold voltage 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) ( n ormalized) - on-resistance ds(on) r i d =- 1a, v gs = - 1. 8 v i d = - 2.7 a, v gs = - 4.5 v i d = - 2.7 a, v gs = - 2.5 v 0.0 0.1 0.2 0.3 0.4 0.5 012345 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t j = 25 c t j = 125 c i d =2.7 a 0.3 0.4 0.5 0.6 0.7 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) soure-drain diode forward voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s t j = 25 c 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1 0.1 1 10 100 0.01 10 - drain c u rrent (a) i d 0.1 t a = 25 c single p u lse limited b yr ds(on) * b v dss limited dc 10 s 100 ms 10 ms 1ms 1 s 100 s
document number: 68927 s09-0389-rev. b, 09-mar-09 www.vishay.com 5 vishay siliconix SIA911EDJ typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) package limited power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 68927 s09-0389-rev. b, 09-mar-09 vishay siliconix SIA911EDJ typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68927 . normalized thermal transient im pedance, junction-to-ambient 1 0.1 0.01 normalized e f f ective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized ef fective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
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